 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SB647, 2SB647A Silicon PNP Epitaxial Application * Low frequency power amplifier * Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 -120 -80 -5 -1 -2 0.9 150 -55 to +150 2SB647A -120 -100 -5 -1 -2 0.9 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) 2SB647 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 1 2SB647A Max Min -- -- -- -10 320 -- -1 Typ Max Unit Test conditions -- -- -- -10 200 -- -1 V V V V A I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, I C = -150 mA*2 VCE = -5 V, I C = -500 mA*2 I C = -500 mA, I B = -50 mA*2 VCE = -5 V, I C = -150 mA*2 Typ -120 -- -80 -5 -- 60 30 -- -- -- -- -- -- -- -- -- -- -- 140 20 -120 -- -100 -- -5 -- 60 30 -- -- -- -- -- -- -- 140 20 -1.5 -- -- -- -- -- -1.5 V -- -- MHz VCE = -5 V, IC = -150 mA pF VCB = -10 V, IE = 0 f = 1 MHz Collector output capacitance Cob Notes: 1. The 2SB647 and 2SB647A are grouped by h FE1 as follows. 2. Pulse test B 2SB647 2SB647A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 -- 2 2SB647, 2SB647A Maximum Collector Dissipation Curve 1.2 Collector power dissipation PC (W) Collector current IC (A) Typical Output Characteristics -1.0 -0.8 -120 0 -10 80 - -60 -40 -30 20 - -10 -5 -2 0.8 -0.6 -0.4 0.4 -0.2 PC = 0. -1 9W -0.5mA IB = 0 0 50 100 Ambient Tmperature Ta (C) 150 0 -2 -4 -6 -8 -10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics -500 DC current transfer ratio hFE -200 Collector current IC (mA) -100 VCE = -5 V Pulse 600 500 400 300 200 100 0 -1 DC Current Transfer Ratio vs. Collector Current VCE = -5 V Pulse 5C -50 -20 -10 -5 -2 -1 0 Ta = 7 25 -25 Ta = 75C 25 -25 -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage VBE (V) -3 -10 -30 -100 -300 -1,000 Collector Current IC (mA) 3 2SB647, 2SB647A Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -1.2 -1.0 IC = 10 IB Pulse -0.8 VBE(sat) Ta = -25C 25 75 -0.6 -0.4 -0.2 0 -1 Ta = 75C 25 -25 VCE(sat) -3 -10 -30 -100 -300 -1,000 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Collector output capacitance Cob (pF) 240 Gain bandwidth product fT (MHz) 200 160 120 80 40 0 -10 VCE = -5 V 200 100 50 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 20 10 5 -30 -100 -300 Collector Current IC (mA) -1,000 2 -1 -2 -5 -10 -20 -50 -100 Collector to Base Voltage VCB (V) 4 Unit: mm 4.8 0.3 3.8 0.3 0.65 0.1 0.75 Max 0.5 0.1 0.7 0.60 Max 2.3 Max 10.1 Min 8.0 0.5 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod -- Conforms 0.35 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of 2SB647
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |